Silicon crystallization using self-assembled monolayers
AssigneeCorning Incorporated
InventorsJ. Greg Couillard, Robert R. Hancock Rr, Mark A. Lewis
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Abstract
A display device comprises a substrate having a layer of crystalline or polycrystalline semiconductor material disposed over the substrate, wherein the substrate has a strain point that is lower than a forming temperature of the layer. The crystalline or polycrystalline material is fabricated by a method that includes providing a self-assembled monolayer (SAM) over the substrate, depositing a layer of material over the SAM, and substantially crystallizing the layer.
Claims9
A method of fabricating a monocrystalline or polycrystalline material over a substrate, comprising:
- depositing a self-assembled monolayer (SAM) over the substrate;
- depositing a layer over the SAM;
- and
- substantially crystallizing the layer, whereby crystallizing the layer comprises annealing the substrate;
- wherein the annealing is carried out at a temperature that is less than a strain point of the substrate.
A method of fabricating a monocrystalline or polycrystalline material over a substrate, comprising:
- depositing a self-assembled monolayer (SAM) over the substrate;
- depositing a layer over the SAM;
- substantially crystallizing the layer;
- and
- wherein the material is a semiconductor.
Dependencies are inferred from the claim text.