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US 7,071,020 B2Granted
Method of forming an elevated photodiode in an image sensor
AssigneeMicron Technology, Inc.
InventorSungkwon Hong
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Abstract
The invention provides an elevated photodiode for image sensors and methods of formation of the photodiode. Elevated photodiodes permit a decrease in size requirements for pixel sensor cells while reducing leakage, image lag and barrier problems typically associated with conventional photodiodes.
Claims6
A method of forming a pixel sensor cell comprising:
- forming a blocking layer on a first substrate layer and over at least one transistor gate;
- forming a plurality of openings in the blocking layer;
- growing an epitaxial layer of silicon in said plurality of openings;
- etching said blocking layer after growing the epitaxial layer to form a sidewall on said at least one transistor gate.
1 more element
Dependencies are inferred from the claim text.