Back to results
US 7,071,016 B2Granted
Micro-electro mechanical systems (MEMS) device using silicon on insulator (SOI) wafer, and method of fabricating and grounding the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsKyu Yeon Park, Ki Hoon Kim
Life of this patent
Estimating the term…
Abstract
An MEMS device using an SOI wafer includes a first silicon layer, an insulation layer formed on the first insulation layer, a second silicon layer formed an the insulation layer, a protective layer formed on the second silicon layer, and a ground hole extending from an upper portion of the protective layer to the first silicon layer and having a conductive material therein. A handle wafer in the MEMS device is connected to the ground hole without performing any additional wiring or bonding process.
Claims4
A method for fabricating and grounding an MEMS device using an SOI wafer, comprising:
- a first step of preparing a first silicon layer;
- a second step of forming an insulation layer on the first silicon layer;
- a third step of forming a second silicon layer on the insulation layer and forming a plurality of slits and a predetermined structure on the second silicon layer, wherein the slits are formed to penetrate the second silicon layer at a location where a ground hole is to be formed;
- a fourth step of forming a protective layer on the second silicon layer;
- a fifth step of forming a signal hole and a ground hole in the protective layer and extending the ground hole to the first silicon layer through the second silicon layer and the insulation layer;
- and
- a sixth step of forming a conductive material layer in the ground hole.
4 more elements
Dependencies are inferred from the claim text.