Structure and method for reducing standing waves in a photoresist
AssigneeAdvanced Micro Devices, Inc.
InventorsDawn Hopper, Kouros Ghandehari, Minh Van Ngo
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Abstract
A structure and method for reducing standing waves in a photoresist during manufacturing of a semiconductor is presented. Embodiments of the present invention include a method for reducing standing wave formation in a photoresist during manufacturing a semiconductor device comprising depositing a first anti-reflective coating having an extinction coefficient above a material, and depositing a second anti-reflective coating having an extinction coefficient above the first anti-reflective coating, such that the first anti-reflective coating and the second anti-reflective coating reduce the formation of standing waves in a photoresist during a lithography process.
Claims18
A method for reducing standing wave formation in a photoresist during manufacturing a semiconductor device comprising:
- depositing a first anti-reflective coating having an extinction coefficient above a material, wherein said first anti-reflective coating comprises silicon and nitrogen, and exposing said first anti-reflective coating to a plasma environment to null effects of nitrogen poisoning on said photoresist;
- depositing a second anti-reflective coating having an extinction coefficient above said first anti-reflective coating, and exposing said second anti-reflective coating to a plasma environment to null effects of nitrogen poisoning on said photoresist;
- subsequent to exposing said first and second anti-reflective coatings to said plasma environments, depositing an oxide film comprising SiO2 above said first and second anti-reflective coatings to prevent footing in said photoresist, such that said first anti-reflective coating, said second anti-reflective coating, and said oxide film reduce the formation of standing waves in a photoresist during a lithography process;
- exposing said oxide film to a plasma environment to further enhance said prevention of footing;
- and
- subsequent to exposing said oxide film to a plasma environment, forming said photoresist above said oxide film.
A method for reducing standing waves in a photosensitive material during manufacturing of a semiconductor device comprising:
- depositing a first anti-reflective coating having an extinction coefficient on a material, wherein said first anti-reflective coating comprises silicon and nitrogen;
- exposing said first anti-reflective coating to a plasma environment to null effects of nitrogen poisoning in said photosensitive material;
- depositing a second anti-reflective coating having an extinction coefficient above said first anti-reflective coating;
- exposing said second anti-reflective coating to a plasma environment to null effects of nitrogen poisoning in said photosensitive material;
- depositing an oxide layer comprising SiO2 above said second anti-reflective coating, such that said first anti-reflective coating and said second anti-reflective coating reduce the formation of standing waves in a photosensitive material during a lithography process and said oxide layer reduces an occurrence of footing;
- and
- exposing said oxide layers to a plasma environment to further enhance prevention of footing.
A structure for reducing the formation of standing waves during manufacture of a semiconductor comprising:
- a first plasma treated anti-reflective coating comprising silicon and nitrogen and having an extinction coefficient deposited on a material;
- a second plasma treated anti-reflective coating having an extinction coefficient deposited above said first anti-reflective coating;
- and
- a plasma treated oxide film comprising SiO2 deposited above said second anti-reflective coating, such that said first anti-reflective coating, said second anti-reflective coating, and said oxide film reduce the formation of standing waves in a photosensitive material during a lithography process.
Dependencies are inferred from the claim text.