Photolithographic mask
AssigneeInfineon Technologies AG
InventorChristoph Nölscher
Life of this patent
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Abstract
A photolithographic mask is based on a combination of a half-tone phase mask and an alternating phase mask such that when radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partly transmissive and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithographic mask. In particular, the advantages can be obtained with only one absorber material and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure.
Claims15
A photolithographic mask, comprising:
- at least one radiation-transmissive substrate;
- and
- at least one phase shifting layer for shifting a phase of radiation, said phase shifting layer disposed on said radiation-transmissive substrate and having openings, said openings formed such that a phase difference is in each case produced upon the radiation passing through adjacent ones of said openings.
A photolithographic mask for irradiation of radiation-sensitive resist layers on semiconductor substrates, the photolithographic mask comprising:
- at least one radiation-transmissive substrate;
- and
- at least one phase shifting layer for shifting a phase of radiation, said phase shifting layer disposed on said radiation-transmissive substrate and having openings, said openings formed such that a phase difference is in each case produced upon the radiation passing through adjacent ones of said openings.
Dependencies are inferred from the claim text.