Process for producing a silicon single crystal which is doped with highly volatile foreign substances

A process for producing a silicon single crystal that is doped with a highly volatile foreign substance, comprising:

• adding a quantity of the foreign substance No to a melt, said foreign substance being in elemental or molecular form and containing at least one element selected from the group consisting of arsenic, antimony and phosphorous;
• pulling a single crystal from the melt under process conditions in a crucible;
• after-doping the melt at a time t at least once during the pulling process, with a quantity ΔN(t) of the foreign substance, in order to compensate for losses caused by the foreign substance evaporating out of the melt, wherein the quantity ΔN(t) of the foreign substance is calculated according to the equation:
• ΔN(t)=N0−N(t)=N0·(1−e−λa·t)
• or according to the approximation equation:
• ΔN(t)=N0·λa·t
• where λa is an evaporation coefficient which describes a process-specific evaporation behavior of the foreign substance and which is obtained after a resistance profile R(t) of a further single crystal has been measured and by calculation according to the equation:
• R(t)=R0·eλa·t
• where R0 is a starting resistivity and the further single crystal is pulled under the process conditions without being after-doped with the foreign substance.