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US 7,067,921 B2Granted
Method for fabricating a metal-insulator-metal capacitor in a semiconductor device
AssigneeDongbu Electronics Co., Ltd.
InventorChee Hong Choi
Life of this patent
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Abstract
A method of fabricating a metal-insulator-metal capacitor in a semiconductor device is disclosed. An example method for fabricating an MIM capacitor of a semiconductor device deposits a metal layer to be used as a lower electrode of an MIM capacitor, deposits a sacrificial layer on the metal layer, and removes some part of the sacrificial layer to form the MIM capacitor thereon. In addition, the example method deposits a dielectric layer and an upper metal layer and forms the MIM capacitor by patterning the dielectric layer and the upper metal layer.
Claims10
An MIM capacitor of a semiconductor device comprising:
- a substrate;
- a lower metal layer in contact with the substrate;
- a sacrificial layer in contact with the substrate and patterned to reveal an area of the lower metal layer;
- dielectric layer in contact with the lower metal layer, the substrate surface, and the sacrificial layer wherein the thickness of the sacrificial layer and the dielectric layer is substantially uniform;
- and
- upper metal layer in contact with the dielectric layer.
3 more elements
Dependencies are inferred from the claim text.