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AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsTakeshi Tachibana, Kazushi Hayashi, Kenichi Inoue, Yoshihiro Yokota, Koji Kobashi, Nobuyuki Kawakami, Takashi Kobori
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A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.
A semiconductor device having a heat spreader comprising a diamond-containing material having a thermal conductivity t, where 350≦t<1000 W/(m·K), the heat spreader being directly disposed entirely or partially on the reverse surface of the semiconductor device, wherein the diamond-containing material is a composite of a diamond layer and a ceramic layer or a mixture of diamond particles and ceramic particles, the ceramic layer or the ceramic particles comprising at least one of silicon carbide and aluminum nitride.
A semiconductor package accommodating the semiconductor device having a heat spreader comprising a diamond-containing material having a thermal conductivity t, where 350≦t<1000 W/(m·K), the heat spreader being directly disposed entirely or partially on the reverse surface of the semiconductor device, wherein a metal heat sink or a metal radiating fin is bonded on a surface of the heat spreader facing away from the semiconductor device, and the diamond-containing material is a composite of a diamond layer and a ceramic layer or a mixture of diamond particles and ceramic particles, the ceramic layer or the ceramic particles comprising at least one of silicon carbide and aluminum nitride.
Dependencies are inferred from the claim text.