Thick oxide region in a semiconductor device

A semiconductor structure, comprising:

• a semiconductor layer;
• and
• an oxide region formed in the semiconductor layer, at least a portion of the oxide region being formed by creating a plurality of trenches in the semiconductor layer, the trenches being formed in close relative proximity to one another, and oxidizing the semiconductor layer so that an insulating layer is formed on at least sidewalls and bottom walls of the trenches, wherein the trenches are configured such that the insulating layer substantially fills the trenches and substantially consumes the semiconductor layer between corresponding pairs of adjacent trenches, whereby a substantially continuous oxide region is formed throughout the plurality of trenches;
• wherein the plurality of trenches includes two end trenches and two or more internal trenches between the end trenches, at least a subset of the internal trenches having different depths relative to one another.

An integrated circuit including at least one semiconductor structure, the at least one semiconductor structure comprising:

• a semiconductor layer;
• and
• an oxide region formed in the semiconductor layer, the oxide region comprising a plurality of trenches formed in the semiconductor layer in close relative proximity to one another that are oxidized such that an insulating layer is formed on at least sidewalls and bottom walls of the trenches, wherein the trenches are configured such that the insulating layer substantially fills the trenches and substantially consumes the semiconductor layer between corresponding pairs of adjacent trenches, whereby a substantially continuous oxide region is formed throughout the plurality of trenches;
• wherein the plurality of trenches includes two end trenches and two or more internal trenches between the end trenches, at least a subset of the internal trenches having different depths relative to one another.

A metal-oxide-semiconductor device, comprising:

• a semiconductor layer of a first conductivity type;
• first and second source/drain regions of a second conductivity type formed in the semiconductor layer proximate an upper surface of the semiconductor layer and spaced apart relative to one another;
• an insulating layer formed on at least a portion of the upper surface of the semiconductor layer proximate the first and second source/drain regions;
• a gate formed on the insulating layer and at least partially between the first and second source/drain regions;
• a conductive pad formed on at least a portion of the insulating layer for providing electrical connection to one of the first and second source/drain regions;
• and
• an oxide region formed under at least a portion of the conductive pad, the oxide region comprising a plurality of trenches formed in the semiconductor layer in close relative proximity to one another that are oxidized such that an oxide layer is formed on at least sidewalls and bottom walls of the trenches, wherein the trenches are configured such that the oxide layer substantially fills the trenches and substantially consumes the semiconductor layer between corresponding pairs of adjacent trenches, whereby a substantially continuous oxide region is formed throughout the plurality of trenches.