Method of assessing potential for charging damage in SOI designs and structures for eliminating potential for damage

A protection circuit for an integrated circuit device that includes silicon over insulator (SOI) transistors, wherein said protection circuit comprises:

• a series device connected to at least one of the source/drain and gate of at least one SOI transistor;
• and
• a compensating conductor connected to said series device,
• wherein said series device and said compensating conductor eliminate the potential for charging damage between said source/drain and said gate of said SOI transistor, and
• wherein said series device and said compensating conductor perform no function other than eliminating said potential for charging damage.

A protection circuit for au integrated circuit device that includes silicon over insulator (SOI) transistors, wherein said protection circuit comprises;

• a shunt connected to at least one of the source/drain and gate of at least one SOI transistor;
• and
• a first compensating conductor connected to said shunt;
• a series device connected to at least one of the source/drain and gate of at least one SOI transistor, wherein said shunt and said series device are connected to different features of said at least one SOI transistor;
• and
• a second compensating conductor connected to said series device,
• wherein said shunt, said series device, said first compensating conductor, and said second compensating conductor eliminate the potential for charging damage to the gate insulator of said SOI transistor, and
• wherein said shunt, said series device, said first compensating conductor, and said second compensating conductor perform no function other than eliminating said potential for charging damage.