US 7,067,852 B1Granted

Electrostatic discharge (ESD) protection structure

AssigneeNational Semiconductor Corporation

InventorsVladislav Vashchenko, Peter J. Hopper, Manuel Carneiro

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Abstract

An ESD protection structure includes a semiconductor substrate of a first conductivity type, and first and second well regions of a second conductivity type disposed in the substrate. The first and second well regions are separated by a gap region of the substrate. Also included are first and second floating regions (of the second conductivity type) disposed in the first and second well regions adjacent to the gap region, respectively. The ESD protection structure also includes first and second contact regions of the first conductivity type disposed on the first and second well regions, respectively, and spaced apart from the first and second floating regions, respectively. The ESD protection structure also includes first and second contact regions of the second conductivity type disposed on the first and second well regions, respectively, and spaced apart from the first and second floating regions, respectively.

Claims17

Dependent claims

A device formed in a semiconductor material of a first conductivity type, the semiconductor material having a surface, the device comprising:

a first well of a second conductivity type formed in the semiconductor material, the first well having a dopant concentration;
a second well of the second conductivity type formed in the semiconductor material, the second well having a dopant concentration and being spaced apart from the first well;
a first contact region of the first conductivity type formed in the first well;
a second contact region of the second conductivity type formed in the first well, the second contact region being electrically connected to the first contact region to have a same potential;
a first trigger region of the second conductivity type formed in the first well, the first trigger region being spaced apart from the first and second contact regions;
a third contact region of the first conductivity type formed in the second well;
a fourth contact region of the second conductivity type formed in the second well, the fourth contact region being electrically connected to the third contact region to have a same potential;
a second trigger region of the second conductivity type formed in the second well, the second trigger region being spaced apart from the third and fourth contact regions;
a separation region of the semiconductor material located only between the first and second trigger regions, the separation region contacting the surface, the first trigger region, and the second trigger region, the separation region having only the first conductivity type;
and
a device region that overlies and contacts the surface at a location where the separation region contacts the surface between the first and second trigger regions, the device region at the location being free of a gate, and not lying below a gate.

8 more elements

A device comprising:

a semiconductor region of a first conductivity type, the semiconductor region having a top surface;
a first well of a second conductivity type that contacts the semiconductor region;
a first connection region of the first conductivity type that contacts the first well;
a second connection region of a second conductivity type that contacts the first well, the second connection region being electrically connected to the first connection region to have a same potential;
a first trigger region of the second conductivity type that contacts the first well and the semiconductor region, the first trigger region being spaced apart from the first and second connection regions, and having a dopant concentration that is substantially greater than a dopant concentration of the first well;
a second well of the second conductivity type that contacts the semiconductor region;
a third connection region of the first conductivity type that contacts the second well;
a fourth connection region of the second conductivity type that contacts the second well, the fourth connection region being electrically connected to the third connection region to have a same potential;
a second trigger region of the second conductivity type that contacts the second well and the semiconductor region, the second trigger region being spaced apart from the first trigger region and the third connection region, and having a dopant concentration that is substantially greater than a dopant concentration of the second well, no region of the second conductivity type lying between the first and second trigger regions;
and
a device region that overlies and contacts only the top surface of the semiconductor region between the first and second trigger regions, the device region being free of a gate, and not lying below a gate.

8 more elements

Dependencies are inferred from the claim text.