Method to reduce the fluorine contamination on the Al/Al-Cu pad by a post high cathod temperature plasma treatment
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWen-Jui Fu, Shang-Ru Shen, Yun-Hung Shen, Chao-Cheng Chen
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Abstract
A method of reducing fluorine contamination on a integrated circuit wafer surface is achieved. The method comprises placing an integrated circuit wafer on a cathode stage. The integrated circuit wafer comprises a surface contaminated with fluorine. The integrated circuit wafer is plasma treated with a plasma comprising a reducing gas that forms HF from the fluorine and a bombardment gas that removes the fluorine from the surface. The cathode stage is heated to thereby increase the rate of the fluorine removal.
Claims20
A method of reducing fluorine contamination on a integrated circuit wafer surface comprising:
- placing an integrated circuit wafer on a cathode stage wherein said integrated circuit wafer comprises a surface contaminated with fluorine;
- and
- treating said integrated circuit wafer surface with a plasma to remove said fluorine from said surface wherein said cathode stage is heated to a temperature to thereby increase the rate of said fluorine removal.
A method of reducing fluorine contamination on a integrated circuit wafer surface comprising:
- placing an integrated circuit wafer on a cathode stage wherein said integrated circuit wafer comprises a surface contaminated with fluorine;
- and treating said integrated circuit wafer with a plasma wherein said plasma comprises a bombardment gas tat removes said fluorine from said surface, wherein said cathode stage is heated to a high temperature to thereby increase the rate of said fluorine removal, and wherein said heating of said cathode stage comprises a temperature range of between 50 degrees C. and 500 degrees C.
A method of reducing fluorine contamination on a integrated circuit wafer surface comprising:
- placing an integrated circuit wafer on a cathode stage wherein said integrated circuit wafer comprises a surface contaminated with fluorine;
- and treating said integrated circuit wafer with a plasma wherein said plasma comprises a reducing gas that forms HF from said fluorine and a bombardment gas that removes said HF from said surface, wherein said cathode stage is heated to a high temperature to thereby increase the rate of said fluorine removal, and wherein said heating of said cathode stage comprises a temperature range of between 50 degrees C. and 500 degrees C.
Dependencies are inferred from the claim text.