Semiconductor device and method of manufacturing the same

A semiconductor device, wherein a plurality of conductive film patterns are formed on the semiconductor substrate, and the conductive film patterns are separated with a certain clearence by a T-shaped groove or a cross-shaped groove, the T-shaped groove or the cross-shaped groove is composed of two linear grooves, and a protrusion is formed at a corner of at least one of the conductive film patterns positioned at a crossing of the two linear grooves constituting the T-shaped groove or the cross-shaped groove, protruding from at least one corner of the conductive film patterns toward the T-shaped groove or the cross-shaped groove.

A semiconductor device, wherein wirings including a first wiring and a second wiring are formed substantially in parallel with a predetermined spacing on the semiconductor substrate, the second wiring having an end at a point intermediate the length of the first wiring, and

• at least one small protrusion is formed at a part of the end of the second wiring so as to protrude from a side of the second wiring toward a side of the first wiring perpendicular with respect to a direction that the second wiring extends,
• or at least one small protrusion is formed at a part of a side of the first wiring that faces the end of the second wiring so as to protrude toward the second wiring perpendicular with respect to a direction that the first wiring extends.

A method of manufacturing a semiconductor device comprising a plurality of wirings, wherein the wirings are formed adjacent to each other, each wiring comprises a first portion extending in a first direction, a second portion extending in a second direction different from the first direction and a corner at which the first and second portions meet, the first portions of the adjacent wirings are parallel to each other and the second portion of the adjacent wirings are parallel to each other, and a clearance is formed between the adjacent wirings,

• wherein a protrusion is formed at the corner of the wirings and the protrusion faces the clearance between the adjacent wirings.

The method of manufacturing a semiconductor device, wherein conductive film patterns are provided with a T-shaped groove or a cross-shaped groove, the T-shaped groove or the cross-shaped groove being composed of two linear grooves, and a protrusion is formed at a corner of at least one of the conductive film patterns positioned at a crossing of the two linear grooves constituting the T-shaped groove or the cross-shaped groove, protruding from at least one corner of the conductive film patterns toward the T-shaped groove or the cross-shaped groove.

A method of manufacturing a semiconductor device, wherein wirings including a first wiring and a second wiring are formed substantially in parallel at a predetermined spacing on the semiconductor substrate, the second wiring having an end at a point intermediate the length of the first wiring, and

• at least one small protrusion is formed at a part of the end of the second wiring so as to protrude from a side of the second wiring toward a side of the first wiring perpendicularly respect to a direction that the second wiring extends,
• or at least one small protrusion is formed at a part of a side of the first wiring that faces the end of the second wiring perpendicularly with respect to a direction that the first wiring extends.