Sensitized chemically amplified photoresist for use in photomask fabrication and semiconductor processing

Abstract

The disclosure pertains to a photoresist composition and a method of using the photoresist in the fabrication of reticles or features on a semiconductor substrate. The photoresist composition and the method are designed to reduce the variation in critical dimension of features across a surface of a substrate, where the variation in critical dimension is a result of localized resist loading. The photoresist composition is useful when the imaging system is G-line, H-line, or I-line, and the photoresist composition includes a sensitizer which works in combination with a DUV photoresist including a PAC, to sensitize the photoresist to the G-line, H-line and I-line imaging.

Dependencies are inferred from the claim text.