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US 7,067,220 B2Granted
Pattern compensation techniques for charged particle lithographic masks
AssigneeInternational Business Machines Corporation
InventorsMichael James Lercel, David Walker
Life of this patent
Estimating the term…
Abstract
A method of producing a particle beam mask and mask structures to allow for the use of dummy fill shapes. This invention overcomes distortion in by adding a dummy shape in unexposed regions and applying a blocking layer to cover the dummy shape. The blocking layer is comprised of an aperture or additional mask mounted close to the mask or can be added to the mask itself.
Claims11
A method for reducing distortion in charged particle lithographic masks, comprising the steps of:
- adding a dummy fill shape in an unexposed region of a mask;
- and
- applying a blocking layer to a region of the dummy fill shape so as to prevent the printing of the dummy fill shape.
Dependencies are inferred from the claim text.