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US 7,067,008 B2Granted
Process for the production of Cd XTe semiconductor crystals with high resistivity and resulting crystalline material
AssigneeEurorad 2-6 SA
InventorsAnne Kazandjian, Jean-Marie Koebel, Paul Siffert
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Abstract
Process for the production of semiconductor crystals with high resistivity of the CdXTe type, wherein X=Zn, Se, ZnSe or 0, characterized in that it consists in carrying out a multiple doping with iron and with at least one second doping element selected from the group formed by the elements of group III of the periodic chart of the elements.
Claims15
Process for the production of semiconductor crystals with resistivity of the Cd XTe type, wherein X=Zn, Se, ZnSe or 0, comprising the step of:
- providing a multiple doping with iron and with at least one second doping element selected from the group consisting of elements of group III of the periodic chart of the elements,
- wherein the second doping element is Al.
Dependencies are inferred from the claim text.