ESD protection circuit with tunable gate-bias

An ESD protection circuit with tunable gate-bias coupled between a first and second pad respectively for receiving a first and second power supply voltage, the ESD protection circuit comprising:

• a series of diodes coupled in the same direction having an anode and cathode on the ends of the series of diodes;
• a resistor coupled between the cathode and the first pad;
• a capacitor coupled between the cathode and the second pad;
• a first transistor of a first conductivity type having a gate coupled to the cathode, a drain coupled to the anode and a source coupled to the second pad;
• a second transistor of a second conductivity type having a gate coupled to the cathode, a drain coupled to the anode and a source coupled to the first pad;
• and
• a third transistor of the first conductivity type having a gate coupled to the anode, a drain coupled to the first pad and a source coupled to the second pad.

An ESD protection circuit with tunable gate-bias coupled between a first and second pad respectively far receiving a first and second power supply voltage, the ESD protection circuit comprising:

• a first diode having an anode and cathode;
• a second diode having an anode and cathode, wherein the cathode is coupled to the cathode of the first diode;
• a resistor coupled between the anode of the second diode and the first pad;
• a capacitor coupled between the anode of the second diode and the second pad;
• a first transistor of a first conductivity type having a gate coupled to the cathode of the first diode, a drain coupled to the anode of the first diode and a source coupled to the second pad;
• a second transistor of a second conductivity type having a gate coupled to the anode of the second diode, a drain coupled to the anode of the first diode and a source coupled to the first pad;
• and
• a third transistor of the first conductivity type having a gate coupled to the anode of the first diode, a drain coupled to the First pad and a source coupled to the second pad.

An ESD protection circuit with tunable gate-bias coupled between a first and second pad respectively for receiving a first and second power supply voltage, the ESD protection circuit comprising:

• a series of first diodes coupled in a same direction having an anode and cathode on the ends of the series of first diodes;
• a second diode having an anode and a cathode, wherein the cathode is coupled to the cathode of the series of the first diodes;
• a resistor coupled between die anode of the second diode and the first pad;
• a capacitor coupled between the anode of the second diode and the second pad;
• a first transistor of a first conductivity type having a gate coupled to the cathode of the series of the first diodes, a drain coupled to the anode of the series of the first diodes and a source coupled to the second pad;
• a second transistor of a second conductivity type having a gate coupled to the anode of the second diode, a drain coupled to the anode of the series of the first diodes and a source coupled to the first pad;
• and
• a third transistor of the first conductivity type having a gate coupled to the anode of the series of the first diodes, a drain coupled to the first pad and a source coupled to the second pad.

An ESD protection circuit with tunable gate-bias coupled between a first and second pad respectively for receiving a first and second power supply voltage, die ESD protection circuit comprising:

• a first transistor of a second conductivity type;
• a diode having a cathode and anodes respectively coupled to a drain and gate of the first transistor;
• a resistor coupled between the anode of the diode and the first pad;
• a capacitor coupled between the anode of the diode and the second pad;
• a second transistor of a first conductivity type having a gate coupled to the cathode of the diode, a drain coupled to a source of the first transistor and a source coupled to the second pad;
• a third transistor of the second conductivity type having a gate coupled to the anode of the diode, a drain coupled to the source of the first transistor and a source coupled to the first pad;
• and
• a fourth transistor of the first conductivity type having a gate coupled to the source of the first transistor, a drain coupled to the first pad and a source coupled to the second pad.

An ESD protection circuit with tunable gate-bias coupled between a first and second pad respectively for receiving a first and second power supply voltage, the ESD protection circuit comprising:

• a diode having an anode and cathode;
• a first transistor of a first conductivity type having a gate coupled to the anode of the diode, a drain coupled to the cathode of the diode and a source coupled to the second pad;
• a second transistor of a second conductivity type having a gate coupled to the anode of the diode, a drain coupled to the cathode of the diode and a source coupled to the first pad;
• a third transistor of the first conductivity type having a gate, a drain coupled to the anode of the diode, and a source coupled to the second pad;
• a fourth transistor of the second conductivity type having a gate coupled to the gate of the third transistor, a drain coupled to the anode of the diode and a source coupled to the first pad;
• a fifth transistor of the second conductivity type having a gate coupled to the cathode of the diode, a source coupled to the first pad and a drain coupled to the second pad;
• a resistor coupled between the gate of the third transistor and the first pad;
• and
• a capacitor coupled between the gate of the third transistor and the second pad.