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AssigneeAdvanced Micro Devices, Inc.
InventorsGilles Amblard, Bhanwar Singh, Khoi A. Phan, Ramkumar Subramanian
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The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) and/or standing wave expression during pattern line formation in an integrated circuit. Systems and methods are disclosed for retaining a target critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER and/or standing wave expression, wherein the shrink component is employed to heat a particular resist to the glass transition temperature of the resist to effectuate mitigation of LER and/or standing wave expression. Additionally, by heating the resist to its glass transition temperature, the systems and methods of the present invention effectively impede deviation from a desired target critical dimension.
A system that mitigates line edge roughness and/or standing wave(s) on pattern lines of a semiconductor device, comprising:
A method for mitigating the deleterious effects of an imperfect bottom anti-reflective layer (BARC) on a patterned semiconductor device, comprising:
A system for mitigating at least one of line-edge roughness and standing wave expression on a patterned semiconductor device, comprising;
Dependencies are inferred from the claim text.