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US 7,064,414 B2Granted
Heater for annealing trapped charge in a semiconductor device
AssigneeInternational Business Machines Corporation
InventorsJohn M Aitken, Ethan H. Cannon, Philip J. Oldiges, Alvin W. Strong
Life of this patent
Estimating the term…
Abstract
A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heating element is formed within the bulk layer. A first side of the first heating element is adjacent to a first portion of the insulator layer. The first heating element is adapted to be selectively activated to generate thermal energy to heat the first portion of the insulator layer and anneal a trapped electrical charge from the first portion of the insulator layer.
Claims29
A semiconductor structure comprising:
- a substrate comprising a bulk layer, an insulator layer and a device layer;
- a first heating element formed within the bulk layer, wherein a first side of the first heating element is adjacent to a first portion of the insulator layer, and wherein the first heating element is adjusted to he selectively activated to generate thermal energy to heat said first portion of the insulator layer and anneal a trapped electrical charge from said first portion of the insulator layer;
- a thermal insulating layer formed within the bulk layer and adjacent to a second side of said first heating element, wherein the thermal insulating layer comprises a thermal conductivity that is less than a thermal conductivity of said bulk layer, and wherein the thermal insulating layer is adapted to thermally isolate the second side of the first heating element from the bulk layer;
- and
- a thermal isolation structure formed surrounding a third side, a fourth side, a fifth side, and a sixth side of said first heating element, wherein the thermal isolation structure thermally isolates the third side, the fourth side, the fifth side, and the sixth side of the first heating element from the bulk layer.
2 more elements
A semiconductor structure comprising:
- a substrate comprising a bulk layer, an insulator layer and a device layer;
- a first heating element formed within the bulk layer, wherein a first side of the first heating element is adjacent to a first portion or the insulator layer, and wherein the first heating element is adapted to be selectively activated to generate thermal energy to heat said first portion of the insulator layer and anneal a trapped electrical charge from said first portion of thc insulator layer;
- and
- a second heating element formed within the bulk layer, wherein the device layer comprises a first electrical component and a second electrical component, wherein the first heating element is below the first electrical component, wherein the second heating element is below the second electrical component, wherein a first side of the second heating element is adjacent to a second portion of the insulator layer, wherein the second heating element is adapted to be selectively activated to generate thermal energy to heat said second portion of the insulator layer and anneal a trapped electrical charge from said second portion of the insulator layer.
1 more element
A method for forming a semiconductor structure comprising:
- providing a substrate;
- forming within the substrate, a bulk layer, an insulator layer and a device layer;
- forming a first heating element within the bulk layer, wherein a first side of the first heating element is adjacent to a first portion of the insulator layer, and wherein the first heating element is adapted to be selectively activated to generate thermal energy to heat said first portion of the insulator layer and anneal a trapped electrical charge from said first portion of the insulator layer;
- forming within the bulk layer and adjacent to a second side of said first heating element, a thermal insulating layer for thermally isolating the second side of the first heating element from the bulk layer, wherein the thermal insulating layer comprises a thermal conductivity that is less than a thermal conductivity of said semiconductor substrate, and wherein the thermal insulating layer thermally isolates the second side of said first heating element from the bulk layer;
- and
- forming within the substrate a thermal isolation structure surrounding a third side, a fourth side, a fifth side, and a sixth side of said first heating element for thermally isolating the third side, the fourth side, the fifth side, and the sixth side of tie first heating element from the bulk layer.
3 more elements
A method for forming a semiconductor structure comprising:
- providing a substrate;
- forming within the substrate, a bulk layer, an insulator layer and a device layer;
- forming a first heating element within the bulk layer, wherein a first side of the first heating element is adjacent to a first portion of the insulator layer, and wherein the first heating element is adapted to be selectively activated to generate thermal energy to heat said first portion of the insulator layer and anneal a trapped electrical charge from said first portion of the insulator layer;
- forming within the device layer, a first electrical component and a second electrical component;
- and
- forming a second heating element within the bulk layer, wherein a first side of the second heating element is adjacent to thc first portion of the insulator layer, wherein the first heating element is below the first electrical component, wherein the second heating element is below the second electrical component, and wherein the second heating element is adapted to be selectively activated to generate thermal energy to heat said second portion of the insulator layer and anneal a trapped electrical charge from said second portion of the insulator layer.
3 more elements
A method for forming a semiconductor structure comprising:
- providing a substrate;
- forming within the substrate a bulk layer, an insulator layer and a device layer;
- forming a first heating element within the bulk layer, wherein a first side of the first heating element is adjacent to a first portion of the insulator layer, and wherein the first heating element is adapted to be selectively activated to generate thermal energy to heat said first portion of the insulator layer and anneal a trapped electrical charge from said first portion of the insulator layer;
- forming a first heating element contact structure electrically connected to a first portion of the first heating element;
- and
- forming a second heating element contact structure electrically connected to a second portion of the first heating element, wherein the first heating element contact structure and the second heating element contact structure electrically connect the first heating element to a power supply.
3 more elements
Dependencies are inferred from the claim text.