Circuit array substrate

Abstract

Poly-silicon semiconductor layer 21 and dummy poly-silicon semiconductor layer 25 are formed in insulation from each other on glass substrate. Gate insulation film 31 is formed on poly-silicon semiconductor layer 21, dummy poly-silicon semiconductor layer 25 and glass substrate and covered with scanning and gate lines 11, which is overlapped with poly-silicon semiconductor layer 21 and dummy poly-silicon semiconductor layer 25. Poly-silicon semiconductor layer 21 is coupled with a reference potential to define capacitor Cc and also with scanning and gate line 11 to define capacitor Cd. Likewise, dummy poly-silicon semiconductor layer 25 is coupled with a reference potential to define capacitor Cc and also with scanning and gate line 11 to define capacitor Cd. Capacitors Cc and Cd suppress increase in voltage applied to gate insulation film 31 between scanning and gate line 11 and poly-silicon semiconductor layer 21 due to electrostatic charges.

Dependencies are inferred from the claim text.