Method for manufacturing semiconductor electronics devices
AssigneeSTMicroelectronics S.r.l.
InventorLuigi Di Dio
Life of this patent
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Abstract
A method is described for manufacturing electronic semiconductor devices comprising the steps of depositing in sequence a layer of hydrophobic material and a “deep UV” photo-resist layer on a semiconductor substrate, selectively removing the “deep UV” photo-resist layer and hydrophobic material in order to expose definite portions of the semiconductor substrate and etch the exposed portions by means of an watery acid solution. This method allows semiconductor devices to be manufactured, also having very critical sizes and with a convenient resolution and control of circuit patterns formed thereon through etching with watery acid solutions.
Claims21
A method for manufacturing electronic semiconductor devices comprising the steps of:
- depositing a layer of hydrophobic material on a substrate;
- depositing a “deep UV” photo-resist layer on the layer of hydrophobic material;
- selectively removing said “deep UV” photo-resist layer in order to form an opening therein and expose a portion of said hydrophobic material;
- selectively removing said hydrophobic material in correspondence with the exposed portion thereof in order to expose a portion of said substrate;
- etching said substrate in correspondence with said exposed portion thereof through chemical etching with a watery acid solution;
- and
- removing said layer of hydrophobic material and said “deep UV” photo-resist layer from the unexposed portions of the semiconductor substrate.
A method for manufacturing electronic semiconductor devices, comprising:
- depositing a hydrophobic layer directly on a semiconductor layer;
- depositing a photo-resist layer on the hydrophobic layer;
- selectively removing the photo-resist layer in order to form an opening therein and expose a portion of the hydrophobic layer;
- selectively removing the hydrophobic layer in correspondence with the exposed portion thereof to expose a portion of the semiconductor layer;
- etching the semiconductor layer in correspondence with the exposed portion of the semiconductor layer;
- and
- removing the layer of hydrophobic material and the photo-resist layer from the unexposed portions of the semiconductor layer.
A method for manufacturing an integrated device, comprising:
- providing an intermediate structure, said intermediate structure including a semiconductor layer, a hydrophobic layer positioned on the semiconductor layer, and a photo-resist layer positioned on the hydrophobic layer;
- providing an opening in the photo-resist layer to expose a portion of the hydrophobic layer;
- and
- providing an opening in the hydrophobic layer corresponding to the exposed portion thereof, that exposes a portion of the semiconductor layer.
Dependencies are inferred from the claim text.