Metal carbide gate structure and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsCyril Cabral, Jr., Christophe Detavernier, Rajarao Jammy, Katherine L. Saenger
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Abstract
A semiconductor device such as a complementary metal oxide semiconductor (CMOS) comprising at least one FET that comprises a gate electrode comprising a metal carbide and method of fabrication are provided. The CMOS comprises dual work function metal gate electrodes whereby the dual work functions are provided by a metal and a carbide of a metal.
Claims17
A method of forming a gate for a FET which comprises providing a substrate, and depositing on said substrate a metal and a carbon-containing layer and reacting said metal and said carbon-containing layer to form a metal carbide gate electrode.
A method of forming a dual work function CMOS device on a substrate which comprises:
- depositing a metal layer on a first and second set of gate regions;
- providing a carbon-containing layer in contact with one of said first and second set of gate regions and not on the other of said first and second set of gate regions, said carbon-containing layer being in direct contact with said metal layer on said one of said first and second set of gate regions;
- reacting said carbon-containing layer on said one of said first and second set of gate regions with said metal on said one of said first and second set of gate regions to form a metal carbide.
A method of forming a dual work function CMOS device on a substrate which comprises:
- providing a carbon-containing layer in contact with one of a first and a second set of gate regions and not on the other of said first and second set of gate regions;
- and then
- depositing a metal layer on said first and second set of gate regions, said metal layer being in direct contact with said carbon-containing layer on said one of said first and second set of gate regions;
- reacting said carbon-containing layer on said one of said first and second set of gate regions with said metal on said one of said first and second set of gate regions to form a metal carbide.
Dependencies are inferred from the claim text.