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US 7,064,048 B2Granted
Method of forming a semi-insulating region
AssigneeUnited Microelectronics Corp.
InventorsJoey Lai, Water Lur
Life of this patent
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Abstract
A semiconductor substrate is provided, and at least one first mask is formed above the semiconductor substrate. The first mask blocks at least one semi-insulating region. A second mask is thereafter formed on a surface of the semiconductor substrate. The second mask covers the semi-insulating region. The semi-insulating region is implanted with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks. Finally, the second mask is removed.
Claims23
A method of forming at least one semi-insulating region in a semiconductor substrate, the method comprising:
- forming at least one first mask above the semiconductor substrate, the first mask blocking the semi-insulating region;
- forming a second mask on a surface of the semiconductor substrate, the second mask covering the semi-insulating region;
- implanting the semi-insulating region with a high energy beam of particles by utilizing the second mask and the first mask as particle hindering masks;
- and
- removing the second mask.
2 more elements
Dependencies are inferred from the claim text.