Method for forming a semiconductor device
AssigneeUnited Microelectronics Corp.
InventorChung-Chin Shih
Life of this patent
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Abstract
A method for forming a semiconductor device by self-aligned is provided. The present method provides a substrate and a multilayer structure is formed thereon. A patterned first layer is formed on the multilayer structure, and a second layer is then formed on the patterned first layer and the multilayer structure. An etching step is performed to partially etch the second layer. A third layer is formed and then is partially removed. Another etching step etches the patterned first layer. The multilayer structure is etched to expose the substrate. The third layer is also etched. A gate layer is formed on the semiconductor device, wherein a plurality of implanted regions are formed inside the substrate not covered by the multilayer structure.
Claims10
A method for forming a semiconductor device, comprising:
- providing a substrate and a multilayer structure thereon;
- forming a patterned first layer is made of nitride on said multilayer structure;
- forming a second layer on said patterned first layer and said multilayer structure;
- partially etching said second layer;
- forming a third layer;
- partially removing said third layer;
- etching said patterned first layer;
- etching said multilayer structure;
- etching said third layer;
- forming a gate layer;
- forming a fourth layer is made of oxide between said gate layer and said substrate;
- and
- wherein a plurality of implanted regions are formed inside said substrate not covered by said multilayer structure.
Dependencies are inferred from the claim text.