Method for forming a multi-bit non-volatile memory device

A method for forming a non-volatile memory device, comprising:

• providing a semiconductor substrate;
• forming a masking layer having a plurality of openings overlying the semiconductor substrate;
• forming a first plurality of sacrificial spacers along edges of the plurality of openings;
• forming a separating dielectric to separate the first plurality of sacrificial spacers within each of the plurality of openings;
• forming a sacrificial protection layer overlying the separating dielectric;
• removing the first plurality of sacrificial spacers;
• removing the sacrificial protection layer;
• forming a layer of memory storage material;
• forming a second plurality of spacers along edges of the first plurality of openings, the second plurality of spacers overlying a portion of the layer of memory storage material to form at least two memory storage regions within each of the plurality of openings;
• removing the layer of memory storage material from areas not underlying the second plurality of spacers;
• forming a common control electrode between and overlying the at least two memory storage regions;
• and
• forming diffusion regions within the semiconductor substrate and adjacent the common control electrode.

A method of forming a data storage device comprising:

• providing a semiconductor substrate;
• forming a sacrificial oxide overlying the semiconductor substrate;
• forming a masking material overlying the sacrificial oxide, the masking material having a plurality of openings;
• forming diffusion regions in the semiconductor substrate in areas underlying the plurality of openings of the masking material;
• forming a dielectric adjacent the masking material and substantially filling the plurality of openings;
• removing the masking material and forming disposable sidewall spacers adjacent edges of the dielectric;
• forming a separating dielectric to separate the disposable sidewall spacers within each of the plurality of openings;
• forming a sacrificial protection layer overlying the separating dielectric, the sacrificial protection being processed to leave a portion of the disposable sidewall spacers exposed;
• removing the disposable sidewall spacers;
• removing the sacrificial protection layer;
• forming at least two memory storage regions within each of the plurality of openings;
• and
• forming a common control electrode overlying the at least two memory storage regions.