Optical proximity correction method
AssigneeUnited Electronics Corp.
InventorsJiunn-Ren Hwang, Jui-Tsen Huang, Chang-Jyh Hsieh
Life of this patent
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Abstract
An integrated circuit layout includes dense figures and at least one isolated figure. A plurality of dummy patterns are formed to surround the isolated figure, so as to reduce the difference in pattern density of the integrated circuit layout. A transmitted light of the dummy patterns provides a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout. The integrated circuit layout and the plurality of dummy patterns are formed on a photo-mask.
Claims14
An optical proximity correction (OPC) method for reducing optical proximity effect occurring in a pattern transferring process, the method comprising:
- providing a photo-mask;
- providing an original photo-mask pattern predetermined to be formed on a surface of the photo-mask, the original photo-mask pattern comprising at least one integrated circuit layout composed of dense figures and at least one isolated figure;
- providing a plurality of dummy patterns to surround the isolated figure to reduce the difference in pattern density of the original photo-mask pattern, a transmitted light of the dummy patterns providing a phase difference of 0 or 180 degrees relative to a transmitted light of the integrated circuit layout, and the integrated circuit layout and the plurality of dummy patterns together composing a corrected photo-mask pattern;
- and
- forming the corrected photo-mask pattern on the surface of the photo-mask.
An optical proximity correction method for reducing optical proximity effect occurring in a pattern transferring process, the method comprising:
- providing a photo-mask;
- providing an integrated circuit layout predetermined to be formed on a surface of the photo-mask, the integrated circuit layout comprising dense figures and at least one isolated figure;
- performing a partial OPC of the integrated circuit layout for obtaining a corrected integrated circuit layout;
- and
- forming the corrected integrated circuit layout on the surface of the photo-mask and forming a plurality of dummy patterns surrounding the isolated figure, the dummy patterns being capable of reducing the difference in pattern density of the corrected integrated circuit layout, and a transmitted light of the dummy patterns providing a phase difference of 0 or 180 degrees relative to a transmitted light of the corrected integrated circuit layout.
Dependencies are inferred from the claim text.