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AssigneesUlvac Coating Corporation, Mitsubishi Denki Kabushiki Kaisha
InventorsTakaei Sasaki, Noriyuki Harashima, Satoshi Aoyama, Shouichi Sakamoto
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A dry-etching method comprises the step of dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film. The dry-etching method permits the production of a half-tone phase-shift photomask by forming patterns to be transferred to a wafer on a photomask blank for a chromium-containing half-tone phase-shift mask. The photomask can in turn be used for manufacturing semiconductor circuits. The method permits the decrease of the dimensional difference due to the coexistence of coarse and dense patterns in a plane and the production of a high precision pattern-etched product.
A method for manufacturing a semiconductor circuit which comprises the steps of transferring the patterns formed on the chromium-containing half-tone phase-shift photomask, being prepared by performing a series of pattern-forming steps including a step for forming a resist layer on a photomask blank, a step for exposing and patterning said resist layer, a developing step, a step for etching said photomask blank and a step for removing said resist layer, wherein the photomask is characterized in that patterns to be transferred onto a wafer are formed on said photomask blank for the chromium-containing half-tone phase-shift photomask according to a dry-etching method comprising dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by reducing the dimensional difference due to the coexistence of coarse and dense patterns within a plane, wherein by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film, to manufacture the semiconductor circuit which comprises coexisting coarse and dense patterns corresponding to said resist patterns, wherein a relative flow rate of the mixed gas used consists of, by volume of mixed gas, one of:
A method for manufacturing a semiconductor circuit which comprises the steps of transferring the patterns formed on the chromium-containing half-tone phase-shift photomask, being prepared by performing a series of pattern-forming steps including a step for forming a resist layer on a photomask blank, a step for exposing and patterning said resist layer, a developing step, a step for etching said photomask blank and a step for removing said resist layer, wherein the photomask is characterized in that patterns to be transferred onto a wafer are formed on said photomask blank for the chromium-containing half-tone phase-shift photomask according to a dry-etching method comprising dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by reducing the dimensional difference due to the coexistence of coarse and dense patterns within a plane, wherein by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film, wherein said metal thin film is a chromium-containing half-tone phase-shift film consisting of a chromium film, a chromium oxide film, a chromium nitride film, chromium oxynitride film, chromium fluoride film or a laminated film thereof, to manufacture the semiconductor circuit which comprises coexisting coarse and dense patterns corresponding to said resist patterns, wherein a relative flow rate of the mixed gas used consists of, by volume of mixed gas, one of:
A semiconductor circuit having a circuit which comprises coexisting coarse and dense patterns corresponding to the resist patterns formed by transferring said resist patterns formed on the chromium-containing half-tone phase-shift photomask, being prepared by performing a series of pattern-forming steps including a step for forming a resist layer on a photomask blank, a step for exposing and patterning said resist layer, a developing step, a step for etching said photomask blank and a step for removing said resist layer, wherein the photomask is characterized in that patterns to be transferred onto a wafer are formed on said photomask blank for the chromium-containing half-tone phase-shift photomask according to a dry-etching method comprising dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by reducing the dimensional difference due to the coexistence of coarse and dense patterns within a plane, wherein by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film, on a wafer on which a light-sensitive material is coated and then developing said light-sensitive material, wherein a relative flow rate of the mixed gas used consists of, by volume of mixed gas, one of:
A semiconductor circuit having a circuit which comprises coexisting coarse and dense patterns corresponding to the resist patterns formed by transferring said resist patterns formed on the chromium-containing half-tone phase-shift photomask, being prepared by performing a series of pattern-forming steps including a step for forming a resist layer on a photomask blank, a step for exposing and patterning said resist layer, a developing step, a step for etching said photomask blank and a step for removing said resist layer, wherein the photomask is characterized in that patterns to be transferred onto a wafer are formed on said photomask blank for the chromium-containing half-tone phase-shift photomask according to a dry-etching method comprising dry-etching a metal thin film as a chromium-containing half-tone phase-shift film, wherein the method is characterized by reducing the dimensional difference due to the coexistence of coarse and dense patterns within a plane, wherein by using, as an etching gas, a mixed gas including (a) a reactive ion etching gas, which contains an oxygen-containing gas and a halogen-containing gas, and (b) a reducing gas added to the gas component (a), in the process for dry-etching the metal thin film, wherein said metal thin film is a chromium-containing half-tone phase-shift film consisting of a chromium film, a chromium oxide film, a chromium nitride film, chromium oxynitride film, chromium fluoride film or a laminated film thereof, on a wafer on which a light-sensitive material is coated and then developing said tight-sensitive material, wherein a relative flow rate of the mixed gas used consists of, by volume of mixed gas, one of:
Dependencies are inferred from the claim text.