US 7,063,871 B2Granted

CVD process capable of reducing incubation time

AssigneeTokyo Electron Limited

InventorsHideaki Yamasaki, Tatsuo Hatano, Tsukasa Matsuda, Taro Ikeda, Kazuhito Nakamura, Koumei Matsuzawa, Yumiko Kawano, Mitsuhiro Tachibana

Life of this patent

Estimating the term…

patentgrep

Loading patent…

Abstract

A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.

Claims11

Dependent claims

A method of forming a metal film from a metal carbonyl compound source, comprising the steps of:

(A) introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that said metal carbonyl compound has a first partial pressure;
(B) depositing a metal film on said surface of said substrate by introducing a gaseous source material containing said metal carbonyl compound into said process space in such a manner that said metal carbonyl compound has a second, smaller partial pressure,
said step (A) being conducted such that there is caused formation of nuclei on said substrate without causing substantial deposition of said metal film on said substrate.

Dependencies are inferred from the claim text.