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US 7,063,478 B2Granted
Crystallization apparatus and crystallization method
AssigneeLCD Technologies Development Center Co., Ltd.
InventorsYukio Taniguchi, Masakiyo Matsumura
Life of this patent
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Abstract
A crystallization apparatus includes a mask and an illumination system which illuminates the mask with a light beam, the light beam from the illumination system becoming a light beam having a light intensity distribution with an inverse peak pattern when transmitted through the mask, and irradiating a polycrystal semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film. The mask includes a light absorption layer having light absorption characteristics according to the light intensity distribution with the inverse peak pattern.
Claims44
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam so as to produce an outgoing light beam, the outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask includes a light absorption layer having light absorption characteristics so as to produce said outgoing light intensity distribution.
1 more element
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam, the outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask and being incident onto, a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask includes a light scattering layer having light scattering characteristics so as to produce said outgoing light intensity distribution.
1 more element
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam, the outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask includes a light reflection layer having light reflection characteristics so as to produce said outgoing light intensity distribution.
1 more element
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam so as to produce an outgoing light beam emerging from the mask, the outgoing light beam having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask includes a light refraction layer having light refraction characteristics so as to produce said outgoing light intensity distribution.
1 more element
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam so as to produce an outgoing light beam emerging from the mask, the outgoing light beam having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask includes a light diffraction layer having light diffraction characteristics so as to produce said outgoing light intensity distribution.
1 more element
A crystallization apparatus comprising:
- a plurality of masks each including at least one basic unit;
- and
- an illumination system configured to illuminate the masks with a light beam so as to produce an outgoing light beam emerging from the masks, the outgoing light beam having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the masks, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the plurality of masks include,
- a first layer and a second layer selected from the group consisting of,
- a light absorption layer having light absorption characteristics so as to produce said outgoing light intensity distribution,
- a light scattering layer having light scattering characteristics so as to produce said outgoing light intensity distribution,
- a light reflection layer having light reflection characteristics so as to produce said outgoing light intensity distribution,
- a light refraction layer having light refraction characteristics so as to produce said outgoing light intensity distribution, and
- a light diffraction layer having light diffraction characteristics so as to produce said outgoing light intensity distribution.
7 more elements
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam, the outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask comprises,
- a phase shift layer and a first layer selected from the group consisting of,
- a light absorption layer having light absorption characteristics so as to produce said outgoing light intensity distribution,
- a light scattering layer having light scattering characteristics so as to produce said outgoing light intensity distribution,
- a light reflection layer having light reflection characteristics so as to produce said outgoing light intensity distribution,
- a light refraction layer having light refraction characteristics so as to produce said outgoing light intensity distribution, and
- a light diffraction layer having light diffraction characteristics so as to produce said outgoing light intensity distribution.
7 more elements
A crystallization apparatus comprising:
- a mask including at least one basic unit;
- and
- an illumination system configured to illuminate the mask with a light beam, the outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit when transmitted through the mask, and configured to irradiate a polycrystalline semiconductor film or an amorphous semiconductor film, thereby generating a crystallized semiconductor film,
- wherein the mask has binary distribution characteristics so as to produce said outgoing light intensity distribution, and being configured to obtain a relatively continuous light intensity distribution by removing a high-frequency component of a spatial frequency.
1 more element
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a light absorption layer having light absorption characteristics so as to produce said light intensity distribution.
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a light scattering layer having light scattering characteristics so as to produce said light intensity distribution.
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light ray emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a light reflection layer having light reflection characteristics so as to produce said light intensity distribution.
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a light refraction layer having light refraction characteristics so as to produce said light intensity distribution.
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from the mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a light diffraction layer having light diffraction characteristics so as to produce said light intensity distribution.
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from said mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a first layer and a second layer, respectively, formed by layers selected from the group consisting of,
- a light absorption layer having light absorption characteristics so as to produce said light intensity distribution,
- a light scattering layer having light scattering characteristics so as to produce said light intensity distribution,
- a light reflection layer having light reflection characteristics so as to produce said light intensity distribution,
- a light refraction layer having light refraction characteristics so as to produce said light intensity distribution, and
- a light diffraction layer having light diffraction characteristics so as to produce said light intensity distribution.
5 more elements
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from said mask having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- using the mask with a phase shift layer and a first layer which is selected from the group consisting of:
- a light absorption layer having light absorption characteristics so as to produce said light intensity distribution,
- a light scattering layer having light scattering characteristics so as to produce said light intensity distribution,
- a light reflection layer having light reflection characteristics so as to produce said light intensity distribution,
- a light refraction layer having light refraction characteristics so as to produce said light intensity distribution, and
- a light diffraction layer having light diffraction characteristics so as to produce said light intensity distribution.
5 more elements
A crystallization method including the steps of:
- illuminating a mask having at least one basic unit,
- irradiating a polycrystalline semiconductor film or an amorphous semiconductor film through the mask, with an outgoing light beam emerging from said mask, having an outgoing light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit, thereby generating a crystallized semiconductor film, and
- removing a high-frequency component of a spatial frequency by using the mask having binary distribution characteristics so as to produce the light intensity distribution, thereby obtaining a relatively continuous light intensity distribution.
A mask used to form a predetermined light intensity distribution by an outgoing light beam emerging from said mask on a predetermined plane, when illuminated by a light beam,
- the mask comprising a light absorption layer including at least one basic unit having light absorption characteristics so as to produce the predetermined light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit.
A mask used to form a predetermined light intensity distribution by an outgoing light beam emerging from said mask on a predetermined plane, when illuminated by a light beam,
- the mask comprising a light scattering layer including at least one basic unit having light scattering characteristics so as to produce the predetermined light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit.
A mask used to form a predetermined light intensity distribution by an outgoing light beam emerging from said mask on a predetermined plane, when illuminated by a light beam,
- the mask comprising a light reflection layer including at least one basic unit having light reflection characteristics so as to produce the predetermined light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit.
A mask used to form a predetermined light intensity distribution by an outgoing light beam emerging from said mask on a predetermined plane, when illuminated by a light beam,
- the mask comprising a light refraction layer including at least one basic unit having light refraction characteristics so as to produce the predetermined light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit.
A mask used to form a predetermined light intensity distribution by an outgoing light beam emerging from said mask on a predetermined plane, when illuminated by a light beam,
- the mask comprising a light diffraction layer including at least one basic unit having light diffraction characteristics so as to produce the predetermined light intensity distribution with a light intensity being minimum substantially at a center of the at least one basic unit and an increasing light intensity towards a periphery of the at least one basic unit.
Dependencies are inferred from the claim text.