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US 7,041,609 B2Granted
Systems and methods for forming metal oxides using alcohols
AssigneeMicron Technology, Inc.
InventorBrian A. Vaartstra
Life of this patent
Estimating the term…
Abstract
A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.
Claims40
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)x (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, R3, and R4 are each independently hydrogen or an organic group;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
10 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe3.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe3.
10 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at Jeast one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Fonnula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation sates of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals.
10 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- and
- contacting the precursor compounds to form a metal oxide layer on the substrate using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe3.
9 more elements
A method of forming a metal oxide layer on a substrate, the method comprising:
- providing a substrate;
- providing at least one alcohol of the formula R(OH)r wherein R is an organic group and r is 1 to 3, with the proviso that the at least one alcohol does not comprise isopropyl alcohol;
- providing at least one metal-containing precursor compound of the formula M1(NR1)w(NR2R3)z (Formula I), M2R4q (Formula II), or Lewis Base adducts of Formula II, wherein:
- M1 and M2 are each independently a metal;
- R1, R2, and R3 are each independently hydrogen or an organic group, and R4 is hydrogen or an organic moiety;
- w is 0 to 4;
- z is 1 to 8;
- q is 1 to 5;
- and
- w, z, and q are dependent on the oxidation states of the metals;
- vaporizing the precursor compounds to form vaporized precursor compounds;
- and
- directing the vaporized precursor compounds to the substrate to form a metal oxide layer on the substrate, wherein the metal oxide layer comprises two or more different metals, with the proviso that the precursor compounds do not comprise AlMe3.
10 more elements
Dependencies are inferred from the claim text.