Method and apparatus for silicon oxide deposition on large area substrates
AssigneeApplied Materials, Inc.
InventorsSanjay D. Yadav, Quanyuan Shang, Wendell T. Blonigan
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Abstract
A method and apparatus for depositing a dielectric material at a rate of at least 3000 Angstroms per minute on a large area substrate that has a surface area of at least about 0.35 square meters is provided. In one embodiment, the dielectric material is silicon oxide. Also provided is a large area substrate having a layer of dielectric material deposited by a process yielding a deposition rate in excess of about 3000 Angstroms per minute and a processing chamber for fabricating the same.
Claims17
A vaporizer module suitable for use in semiconductor processing, comprising:
- a first thermally conductive plate having a thickness of at least 0.125 inches having a first side;
- a second plate thermally conductive plate coupled to the first side of the first plate to define a vaporizer assembly;
- a plurality of grooves formed at least partially in the first plate and covered by the second plate,
- a first port formed in a first end of the vaporizer assembly;
- and
- a second port formed in a second end of the vaporizer assembly and fluidly coupled to the first port by the grooves.
A vaporizer module, comprising:
- a liquid flow controller;
- a temperature controller cooperating with the flow controller to maintain the flow controller at a predefined temperature;
- and
- a vaporizer having an inlet coupled to the flow controller and an outlet adapted to flow a gaseous precursor to a semiconductor processing chamber.
Dependencies are inferred from the claim text.