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US 7,031,138 B2Granted
Ferroelectric capacitor and process for its manufacture
AssigneesInfineon Technologies AG, Kabushiki Kaisha Toshiba
InventorsBum-Ki Moon, Gerhard Beitel, Osamu Arisumi, Hiroshi Itokawa
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Abstract
In a capacitor and a method for its manufacture, a first electrode layer and a second electrode layer are formed such that a ferroelectric layer is situated between the first and second electrode layer. A first bilayer or multi-layer seed structure is formed between the ferroelectric layer and either the first electrode layer or the second electrode layer.
Claims10
A capacitor comprising,
- a first electrode layer;
- a second electrode layer;
- a ferroelectric layer situated between the first and second electrode layers;
- a first multi-layer seed structure situated between the ferroelectric layer and one of the first electrode layer and the second electrode layer, the first multi-layer seed structure comprising:
- a first seed layer in contact with the ferroelectric layer and having a composition that is substantially identical to that of the ferroelectric layer, and
- a second seed layer in contact with the one of the first electrode layer and the second electrode layer and having a composition that is different than that of the ferroelectric layer but which includes at least one component of the ferroelectric layer;
- and
- a second multi-layer seed structure situated between the ferroelectric layer and another of the first electrode layer and the second electrode layer.
5 more elements
Dependencies are inferred from the claim text.