High-frequency power amplifier
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsSeiki Goto, Yoshinobu Sasaki
Life of this patent
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Abstract
In a high-frequency power amplifier, gate feed portions are formed by dividing a gate feed which connects transistor gate electrodes in parallel, and each of the gate feed portions includes a given number of gate electrodes connected in parallel. Each of transistor cell elements includes a set of the gate electrodes connected in parallel. A resistance wire is interposed between the transistor cell elements to isolate each transistor cell element. The resistance wire and the gate electrodes are made of the same metal material and formed by the same process. Thus, closed loop oscillation of transistors is suppressed with no increase in chip size.
Claims9
A power amplifier comprising:
- a semiconductor substrate;
- and
- a plurality of field effect transistors on the semiconductor substrate and electrically connected in parallel, each field effect transistor including
- a plurality of interdigitated source, gate, and drain electrodes,
- a plurality of transistor cell elements electrically connected in parallel, each transistor cell element having
- a fixed number of the gate electrodes of the transistor,
- a gate power supply segment electrically connecting in parallel the fixed number of gate electrodes of the transistor cell element, and
- a gate power supply portion supplying a gate signal to the gate power supply segment of the transistor cell element, and
- a resistance interconnect line having a resistance and interposed between and electrically connecting respective transistor cell elements of the transistor to each other.
Dependencies are inferred from the claim text.