Heterojunction bipolar transistor having specified lattice constants
AssigneeSharp Kabushiki Kaisha
InventorMotoji Yagura
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Abstract
A Heterojunction Bipolar Transistor, HBT, (100) containing a collector layer (104), a base layer (105) and an emitter layer (106) is constructed such that the collector layer (104), the base layer (105) and the emitter layer (106) have different lattice constants of ac, ab and ae respectively, and a value of ab between values of ac and ae (in other words, the values of ac, ab and ae satisfy a relationship of ac>ab>ae or ac<ab<ae). According to the present invention, the HBT having a high reliability can be realized without altering the existing apparatus and steps for producing the HBT extensively.
Claims16
A heterojunction bipolar transistor comprising a collector layer, a base layer and an emitter layer, wherein the collector layer, the base layer and the emitter layer have different lattice constants of ac, ab and ae respectively, and a value of ab is between values of ac and ae.
Dependencies are inferred from the claim text.