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US 7,030,454 B2Granted
Semiconductor devices and methods of forming a trench in a semiconductor device
AssigneeDongbuAnam Semiconductor Inc.
InventorYoung-Hun Seo
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods to form a trench in a semiconductor device are disclosed. A disclosed process comprises: forming a hollow by etching a portion of a semiconductor substrate; forming a side wall layer in an inner side wall of the hollow; forming a trench by further etching the semiconductor substrate exposed through the bottom of the hollow; and filling the trench by forming an insulation film on the side wall layer and the trench.
Claims15
A semiconductor device comprising:
- a hollow formed in a semiconductor substrate, the hollow having a width;
- a trench formed in the semiconductor substrate, the trench having a decreasing width, a widest point of the decreasing width being less than a narrowest point of the width of the hollow;
- a side wall layer formed on an inner side wall of the hollow, the side wall layer having a thickness which is dependent upon a depth of the hollow, wherein the side wall layer has an upper portion and a lower portion, the lower portion being disposed at an obtuse angle relative to the upper portion;
- and
- an insulation film formed on the side wall layer and the trench for filling the trench.
2 more elements
A semiconductor device comprising:
- a hollow formed in a semiconductor substrate, the hollow having an upper portion having a uniform width and substantially parallel side walls and a lower portion having side walls which are inwardly inclined at a substantial angle relative to a horizontal plane;
- a trench formed in the semiconductor substrate beneath the hollow, the trench and the hollow being in communication;
- a side wall layer formed on an inner side wall of the hollow, wherein the side wall layer has an upper portion and a lower portion, the lower portion being disposed at an obtuse angle relative to the upper portion;
- and
- an insulation film formed on the side wall layer and the trench for filling the trench.
2 more elements
Dependencies are inferred from the claim text.