Power semiconductor component in the planar technique
AssigneeIXYS Semiconductor GmbH
InventorArno Neidig
Life of this patent
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Abstract
In a power semiconductor component produced in a planar technique, a near-surface structure having at least one depression is formed in a surface region of an edge termination adjacent a main surface of the semiconductor body. The structure lies inside a space charge region formed when a voltage is applied at a junction between semiconductor regions of opposite conduction type. Dielectric material may fill the depression and form a passivation layer on the surface region. The depression may be an annular trench having a width to depth ratio ≦1. Alternatively, the structure may be waffle-shaped with multiple depressions.
Claims11
A power semiconductor component produced in the planar technique comprising:
- a semiconductor body of one conduction type, at least one semiconductor region of another conduction type opposite to the one conduction type embedded in a first surface region adjacent to a main surface of the semiconductor body, an edge termination terminating the semiconductor component, said edge termination being adjacent to the first surface region whereby a space charge region is formed in the edge termination in the presence of a voltage applied at a junction between the semiconductor body and said one semiconductor region and, a near-surface structure having at least one depression is formed in a surface region of the edge termination adjacent to the main surface, in such a way that the near-surface structure lies inside the space charge region and the near-surface structure comprises a waffle-shaped structure with a plurality of depressions.
Dependencies are inferred from the claim text.