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US 7,030,019 B2Granted
Semiconductor device fabrication method
AssigneeSharp Kabushiki Kaisha
InventorTakashi Kawasaki
Life of this patent
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Abstract
A semiconductor device fabrication method according to the invention comprises the steps of: (1) exposing a silicon layer by removing a portion of an insulating layer above a projected part of the silicon layer, the insulating layer covering the silicon layer; and (2) chemically and mechanically polishing the exposed silicon layer with a polishing slurry for the silicon layer while protecting the silicon layer with the remaining of the insulating layer.
Claims18
A semiconductor device fabrication method comprising:
- forming a first insulating film directly on and contacting a semiconductor substrate, and patterning the first insulating film to form a plurality of projected parts with recessed parts therebetween so that the first insulating film contacts the semiconductor substrate and forms the projected parts and no film is located between the semiconductor substrate and the first insulating film at the projected parts;
- forming a layer comprising silicon on the projected parts and in the recessed parts;
- forming a second insulating film on the layer comprising silicon, the second insulating film having a thickness less than the first insulating film;
- exposing the layer comprising silicon by removing a portion of the second insulating film above projected parts while leaving in place the second insulating film over substantially portions of the recessed parts;
- and
- chemically and mechanically polishing the exposed parts of the layer comprising silicon with a polishing slurry while protecting other parts of the layer comprising silicon with the remaining of the second insulating film.
3 more elements
A semiconductor device fabrication method comprising:
- (1) forming a silicon layer having a thickness substantially the same as or thinner than the height of a projected part on a semiconductor substrate so as to cover the surface of the substrate, the projected part being formed of a first insulating layer, wherein the first insulating layer is formed directly on and contacting the semiconductor substrate and the first insulating layer is patterned to form at least the projected part and no film is located between the semiconductor substrate and the first insulating layer at the projected part;
- (2) forming a second insulating layer covering the silicon layer;
- (3) exposing the silicon layer by removing a portion of the second insulating layer above the projected part on the substrate;
- (4) substantially leveling the silicon layer and exposing the first insulating layer by chemically and mechanically polishing the exposed silicon layer while protecting the silicon layer in other areas with a remainder of the second insulating layer, and using the remainder of the second insulating layer and/or the projected part of the first insulating layer as a stopper layer;
- and
- (5) removing the remainder of the second insulating layer.
3 more elements
A semiconductor device fabrication method comprising:
- (1) forming a silicon layer having a thickness thicker than the height of a projected part on a substrate so as to cover the surface of the substrate, the projected part being formed of a first insulating layer;
- (2) forming a second insulating layer covering the silicon layer;
- (3) exposing the silicon layer by removing a portion of the second insulating layer above the projected part on the substrate;
- (4) substantially leveling the silicon layer by chemically and mechanically polishing the exposed silicon layer while protecting the silicon layer with the remaining of the second insulating layer and using the remaining of the second insulating layer as a stopper layer;
- (5) removing the remaining of the second insulating layer;
- and
- (6) exposing the first insulating layer by chemically and mechanically polishing the substantially leveled silicon layer,
- wherein the steps (1 )–(6) are performed in the order they are recited.
5 more elements
Dependencies are inferred from the claim text.