US 7,029,991 B2Granted

Method for making a SOI semiconductor substrate with thin active semiconductor layer

AssigneeSTMicroelectronics S.r.l.

InventorsVincent Le Goascoz, Herve Jaouen

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Abstract

The invention concerns a method comprising: 1) a first phase including steps which consist in forming in the upper part of a first initial semiconductor substrate a first layer of insulating material above a sectional plane of said first substrate, contacting the first layer of insulating material with the insulating upper part of a second initial substrate, so as to form a single layer of insulating material, a break at the sectional plane, so as to obtain an intermediate semiconductor substrate on the single insulating material layer; then, 2) in a second phase which consists in forming in the intermediate semiconductor substrate an additional insulating material layer adjacent to the single insulating material and topped with an upper layer of a final semiconductor substrate.

Claims20

Dependent claims

A process for fabricating two or more silicon-on-insulator (SOI) type semiconductor substrates, wherein each of the substrates include a semiconductor active layer, the process comprising the steps of:

forming an insulating layer on top of a support layer;
forming a silicon-containing semiconductor substrate with a given thickness on top of the insulating layer;
forming both an insulation layer within the silicon-containing semiconductor substrate, and a residual layer of silicon-containing semiconductor on top of the silicon-containing semiconductor substrate, by performing the steps of:
implanting at least one of nitrogen and oxygen atoms at a predetermined depth in the given thickness of the silicon-containing semiconductor substrate;
and
activating at least one of nitrogen and oxygen atoms through heat to create a layer of insulating, material within the silicon-containing semiconductor substrate and to create a residual layer of silicon-containing semiconductor through the reaction with the silicon-containing semiconductor substrate thereby creating the residual layer of silicon-containing semiconductor with a predetermined thickness.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 10/312,024Filed 21 Jun 2001
Priority: FR 00 0809423 Jun 2000
Published: US 2004/0029325 A112 Feb 2004
Granted: 18 Apr 2006
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H10P 30/209
Of electrically inactive species: in silicon to make buried insulating layers
H10P 90/1908
Preparing SOI wafers: using silicon implanted buried insulating layers, e.g. oxide layers [SIMOX]
H10W 10/181
Isolation regions comprising dielectric materials: semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
H10P
Generic processes or apparatus for the manufacture or treatment of devices covered