Method for fabricating semiconductor device
AssigneeFujitsu Limited
InventorsYoshimasa Horii, Masaaki Nakabayashi, Masaki Kurasawa, Kou Nakamura, Kazuaki Takai, Hideyuki Noshiro, Shigeyoshi Umemiya
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Abstract
A method is disclosed for fabricating a semiconductor device having a memory employing a ferroelectric capacitor in which the orientation of the ferroelectric film is controlled. The method for fabricating the semiconductor device includes a first film deposition process for forming a first ferroelectric layer, and a second film deposition process for forming a second ferroelectric layer on the first ferroelectric layer. The film deposition temperature of the first film deposition process is set to at least 600° C.
Claims18
A method for fabricating a semiconductor device including a ferroelectric capacitor, the method comprising:
- a lower electrode forming step for forming a lower electrode of the ferroelectric capacitor;
- a first film deposition step for forming a first ferroelectric film primarily having a (111) orientation on the lower electrode through a vapor deposition process using an organic metal source;
- a second film deposition step for forming a second ferroelectric film primarily having a (111) orientation on the first ferroelectric film through a vapor deposition process using the organic metal source;
- and
- an upper electrode forming step for forming an upper electrode on the second ferroelectric film;
- wherein
- the first ferroelectric film and the second ferroelectric film include at least one of Pb (Zrx, Ti1-x)O3 and PbTiO3;
- and
- a film deposition temperature of the first film deposition step is 600–650° C.
Dependencies are inferred from the claim text.