Source and drain protection and stringer-free gate formation in semiconductor devices
AssigneeAdvanced Micro Devices, Inc.
InventorsChih-Yuh Yang, Shibly S. Ahmed, Srikanteswara Dakshina-Murhty, Cyrus E. Tabery, Bin Yu
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Abstract
A method of manufacturing a semiconductor device may include forming a fin structure on an insulator and depositing a gate material over the fin structure. The method may also include depositing an organic anti-reflective coating on the gate material and forming a gate mask on the organic anti-reflective coating. The organic anti-reflective coating around the gate mask may be removed, and the gate material around the gate mask may be removed to define a gate.
Claims17
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- depositing a gate material over the fin structure;
- depositing an organic anti-reflective coating on the gate material to a thickness ranging from about 300 Å to about 800 Å;
- forming a gate mask on the organic anti-reflective coating;
- removing the organic anti-reflective coating around the gate mask, wherein the removing the organic anti-reflective coating includes etching the organic anti-reflective coating until a top surface of the gate material is exposed and continuing the etching for a predetermined period of time after the top surface of the gate material has been exposed;
- and
- removing the gate material around the gate mask to define a gate.
A method of manufacturing a semiconductor device, comprising:
- forming a fin structure on an insulator;
- depositing polysilicon over the fin structure;
- depositing an anti-reflective coating on the polysilicon to a thickness ranging from about 350 Å to about 800 Å;
- forming a gate mask on the anti-reflective coating;
- etching the anti-reflective coating from around the gate mask using a non-fluorine etchant until a top surface of the polysilicon has been exposed;
- continuing the etching for a predetermined period of time after the top surface of the polysilicon has been exposed;
- and
- etching the polysilicon from around the gate mask to form a gate.
A method of manufacturing a semiconductor device, comprising:
- forming a vertically-oriented fin structure on an insulator;
- depositing polysilicon over the fin structure;
- depositing an organic anti-reflective coating to a thickness ranging from about 350 Å to about 800 Å on the polysilicon;
- forming a gate mask on the organic anti-reflective coating;
- etching the organic anti-reflective coating from around the gate mask using HBr/O2 chemistry or He/N2/O2 chemistry, the etching including etching the organic anti-reflective coating until a top surface of the polysilicon has been exposed and continuing the etching for a predetermined period of time after the top surface of the polysilicon has been exposed;
- etching the polysilicon from around the gate mask to define a gate;
- and
- removing the gate mask to form the gate.
Dependencies are inferred from the claim text.