Self aligned damascene gate
AssigneeAdvanced Micro Devices, Inc.
InventorsCyrus E. Tabery, Shibly S. Ahmed, Matthew S. Buynoski, Srikanteswara Dakshina-Murthy, Zoran Krivokapic, Haihong Wang, Chih-Yuh Yang, Bin Yu
Life of this patent
Estimating the term…
Abstract
A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET) includes patterning a fin area, a source region, and a drain region on a substrate, forming a fin in the fin area, and forming a mask in the fin area. The method further includes etching the mask to expose a channel area of the MOSFET, etching the fin to thin a width of the fin in the channel area, forming a gate over the fin, and forming contacts to the gate, the source region, and the drain region.
Claims17
A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET), comprising:
- forming a fin on a substrate;
- forming a mask on the substrate;
- etching the mask to expose a channel area of the MOSFET;
- thinning a width of the fin in the channel area, wherein thinning the width of the fin comprises etching one or more surfaces of the fin using a fluorine (F) plasma process;
- and
- forming a gate over the fin, the gate extending on each side of the fin.
A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET), comprising:
- patterning a fin area, a source region, and a drain region on a substrate;
- forming a fin in the fin area;
- forming a mask in the fin area;
- etching the mask to expose a channel area of the MOSFET;
- etching the fin to thin a width of the fin in the channel area, wherein etching the fin to thin a width of the fin comprises at least one of:
- using a fluorine (F) plasma process to etch the fin, or
- using a hydrogen bromide (HBr) based plasma chemistry to etch the fin;
- forming a gate over the fin;
- and
- forming contacts to the gate, the source region, and the drain region.
A method for forming a metal-oxide semiconductor field-effect transistor (MOSFET), comprising:
- forming a fin on a substrate;
- forming a mask on the substrate;
- etching the mask to expose a channel area of the MOSFET;
- thinning a width of the fin in the channel area, wherein thinning the width of the comprises etching the fin using a hydrogen bromide (HBr) based plasma chemistry;
- and
- forming a gate over the fin, the gate extending on each side of the fin.
Dependencies are inferred from the claim text.