Immersion lithography methods using carbon dioxide
AssigneeSamsung Electronics Co., Ltd.
InventorsJason P. Rolland, Joseph P. DeSimone
Life of this patent
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Abstract
A substrate is patterned by performing immersion lithography on a photoresist layer on the substrate using carbon dioxide. The immersion layer may be provided and/or removed and/or the photoresist layer may be developed, dried and/or removed using carbon dioxide. The immersion layer can include liquid and/or solid immersion layers. The need for organic solvents in immersion lithography can thereby be reduced or eliminated.
Claims47
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- depositing a fluid layer onto the photoresist layer, the fluid layer comprising carbon dioxide and at least one immersion compound;
- and
- removing at least some of the carbon dioxide from the fluid layer to provide an immersion fluid layer on the photoresist layer.
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- forming an immersion layer on the photoresist layer;
- imaging the photoresist layer through the immersion layer;
- and
- removing the immersion layer from the imaged photoresist layer by contacting the immersion layer with an immersion rinse composition comprising liquid and/or supercritical carbon dioxide.
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- forming an immersion layer comprising carbon dioxide on the photoresist layer;
- imaging the photoresist layer through the immersion layer;
- removing the immersion layer from the photoresist layer;
- and
- drying the photoresist layer from which the immersion layer has been removed using liquid and/or supercritical carbon dioxide.
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- forming an immersion layer comprising carbon dioxide on the photoresist layer;
- imaging the photoresist layer through the immersion layer;
- removing the immersion layer from the photoresist layer;
- and
- developing the photoresist layer from which the immersion layer has been removed using liquid and/or supercritical carbon dioxide.
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- forming an immersion layer on the photoresist layer;
- imaging the photoresist layer through the immersion layer;
- and
- removing the immersion layer from the photoresist layer and simultaneously developing the photoresist layer using liquid and/or supercritical carbon dioxide.
A method of patterning a substrate comprising performing immersion lithography on a photoresist layer on the substrate using carbon dioxide, wherein the performing immersion lithography comprises:
- placing a solid immersion film on the photoresist layer;
- and
- imaging the photoresist layer through the solid immersion film.
A method of patterning a substrate comprising:
- placing an immersion fluid layer on a photoresist layer on a substrate;
- placing a solid immersion film on the immersion fluid layer opposite the photoresist layer;
- and
- imaging the photoresist layer through the immersion fluid layer and the solid immersion film that were placed on the photoresist layer.
Dependencies are inferred from the claim text.