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US 7,029,802 B2Granted
Embedded bi-layer structure for attenuated phase shifting mask
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorCheng-ming Lin
Life of this patent
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Abstract
An embedded bi-layer structure for an attenuated phase-shifting mask comprises an inner layer with lower transmittance, formed on a substrate; and an outer layer, formed on the inner layer, with higher transmittance and being more chemically stable than the inner layer. A method of forming such an embedded bi-layer structure is provided.
Claims19
An embedded bi-layer structure for an attenuated phase-shifting mask, comprising:
- an inner layer with a first transmittance, formed above a substrate;
- and
- an outer layer, formed on said inner layer, with a second transmittance higher than said first transmittance and being more chemically stable than said inner layer.
A method of forming an embedded bi-layer structure for an attenuated phase-shifting mask, comprising:
- forming an inner layer above a substrate;
- and
- forming an outer layer on said inner layer, sufficiently saturated with at least one of the group consisting of oxygen and nitrogen, to obtain higher transmittance and more chemical stability than said inner layer.
Dependencies are inferred from the claim text.