Reticle with antistatic coating
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWei-Yu Su, Dong-Hsu Cheng, Li-Kong Turn
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Abstract
A static resistant reticle comprises a substrate and a patterning layer and is covered by an antistatic conductive film of quaternary amine (R4N)+Cl−. A pellicle structure comprising an optically transparent membrane tightly stretched on a frame is also coated by an antistatic electro conductive film of a similar material. The reticle with the pellicle form a shielded structure isolating the reticle from ESD.
Claims20
A static resistant reticle for use in integrated circuit lithographic process comprising:
- a quartz substrate,
- a patterning layer placed on the substrate, and
- a film coating of an antistatic conductive material including a quaternary amine (R4N)+Cl− with M.W. between about 200 and about 500 covering the substrate and the patterning layer,
- whereby a shielding effect protecting the reticle by eliminating potential difference on the reticle is attained.
A pellicle used for preventing dust particles from lying on a reticle and for defocusing the dust particles lying on the pellicle, the pellicle comprising:
- a pellicle membrane;
- and
- a pellicle mounting system including a frame, on which the pellicle membrane is attached and with which the pellicle establishes contact with the reticle,
- the pellicle being coated by an antistatic electro conductive coating to prevent ESD on the reticle from occurring, wherein said antistatic material used for the coating is a quaternary amine (R4N)+Cl− with M.W. of about 200–500.
A static resistant reticle-pellicle structure for use in integrated circuit lithographic process comprising:
- a reticle with
- a quartz substrate and
- a patterning layer placed on the substrate, and pellicle with
- a pellicle membrane and
- a pellicle mounting system including a frame, on which the pellicle membrane is attached and with which the pellicle establishes contact with the reticle, wherein
- an antistatic electro conductive coating is deposited on the reticle and pellicle to thereby shield the structure and prevent ESD on the reticle from occurring, wherein said antistatic material used for the coating is a quaternary amine (R4N)+Cl− with M.W. of about 200–500.
Dependencies are inferred from the claim text.