Composition and method for forming doped A-site deficient thin-film manganate layers on a substrate
AssigneeAdvanced Technology Materials, Inc.
InventorsThomas H. Baum, Galena Doubinina, Daniel Studebaker
Life of this patent
Estimating the term…
Abstract
A method of forming an A site deficient thin film manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, and transporting the precursor vapor to a chemical vapor deposition reactor for formation of an A site deficient manganate thin film on a substrate. The invention also contemplates a device comprising an A site deficient manganate thin film, wherein the manganate layer is formed on the substrate by such a process and is of the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and (x+y)<1.0, and preferably from about 0.5 to about 0.99.
Claims22
A method of forming a doped A-site deficient manganate material on a substrate from corresponding precursor(s), comprising liquid delivery and flash vaporization thereof to yield a precursor vapor, transporting the precursor vapor to a chemical vapor deposition reactor for chemical vapor deposition formation of the manganate material on the substrate, said manganate material having the formula LaxMyMnO3, where M=Mg, Ca, Sr, or Ba, and 0.5<(x+y)<0.9, and annealing the manganate material in an oxygen atmosphere for a sufficient time period to increase the Curie temperature of the manganate material in a range from 17° C. to about 50° C.
Dependencies are inferred from the claim text.