Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
AssigneeMicron Technology, Inc.
InventorJames Pan
Life of this patent
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Abstract
The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.
Claims22
A method of selectively cleaning a surface of a semiconductor process chamber, comprising:
- selecting two surfaces of the process chamber, one of the surfaces reacting with a reactant introduced into the chamber when the one surface has a temperature at or above a given temperature, wherein one of the surfaces comprises at least a liner or window surface of the chamber having deposits thereon;
- creating a predetermined temperature differential between the two surfaces by allowing a heated object in the chamber to transfer heating energy to the one surface so that the temperature of the one surface is at or above the given temperature and the other surface has a temperature below the given temperature;
- contacting the two surfaces with a reactant during the predetermined temperature so that the reactant acts on the one surface to remove the deposits;
- allowing sufficient time for the reactant to react preferentially with the one surface to a predetermined degree relative to the other surface to remove the deposits;
- and
- removing the deposits from the chamber.
Dependencies are inferred from the claim text.