Semiconductor storage device and semiconductor integrated circuit

A semiconductor storage device, comprising:

• a first semiconductor layer formed on a substrate via a buried insulation film;
• an FBC (Floating Body Cell) having a channel body of floating type formed on said first semiconductor layer, a main gate which forms a channel at a first face of said channel body, and an auxiliary gate formed to capacitively couple on a second face at an opposite side of said first face;
• and
• a logic circuit formed on said first semiconductor layer, separate from said FBC by said an insulation film, which transfers a signal for said FBC,
• wherein a thickness of said buried insulation film below said logic circuit is thicker than that of said buried insulation below said FBC.

A semiconductor storage device, comprising:

• a first semiconductor layer formed on a substrate via a buried insulation film;
• an FBC (Floating Body Cell) having a channel body of floating type formed on said first semiconductor layer, a main gate which forms a channel at a first face of said channel body, and an auxiliary gate formed to capacitively couple on a second face at an opposite side of said first face;
• and
• a logic circuit formed on said first semiconductor layer, separate from said FBC by said an insulation film, which transfers a signal for said FBC,
• wherein the first semiconductor layer of the FBC is thinner than that of the logic circuit.

A semiconductor storage device, comprising:

• a first semiconductor layer formed on a substrate via a buried insulation film;
• a FBC (Floating Body Cell) having a channel body of floating type formed on said first semiconductor layer, a main gate which forms a channel at a first face of said channel body, and an auxiliary gate formed to capacitively couple on a second face at an opposite face of said first face;
• a logic circuit formed on said first semiconductor layer, separate from said FBC by said insulation film, which transfers a signal for said FBC;
• and
• a plurality of polysilicon layers or metal layers formed separate from each other inside said buried insulation film in accordance with said FBC and said logic circuit.

A semiconductor integrated circuit, comprising:

• a first semiconductor layer formed on a substrate via a buried insulation film;
• a CMOS circuit having a PMOSFET and an NMOSFET formed separate from each other on said first semiconductor layer;
• a second semiconductor layer which locates below said PMOSFET, and is formed along an under face of said buried insulation film;
• and
• a third semiconductor layer which locates below said NMOSFET, and is formed separate from said second semiconductor film, along the under face of said buried insulation film,
• wherein said second and third semiconductor layers are set to be in a potential different from each other in which back-channels of said PMOSFET and said NMOSFET does not turn on.