Protection structure for protection from electrostatic discharge and integrated circuit

An ESD protection structure, comprising:

• a bipolar protection element to be connected to an integrated circuit for protecting the integrated circuit from electrostatic discharge, said bipolar protection element having:
• an emitter zone of a first conduction type;
• a buried layer of said first conduction type;
• a base zone of a second conduction type disposed between said emitter zone and said buried layer;
• an intermediate layer spacing said base zone apart from said buried layer;
• said buried layer having at least one section in which are disposed highly doped and lightly doped regions, said highly doped regions being spaced apart from one another by said lightly doped regions;
• and
• a breakdown region having a reduced breakdown voltage and being disposed in a part of said protection element spaced apart from said section of said buried layer.

A semiconductor body, comprising:

• an integrated circuit;
• at least one terminal pad;
• an electrical connecting line electrically connecting said terminal pad to said integrated circuit;
• busbars, at least one of said busbars being connected to said integrated circuit and, at least during operation of said busbar, supplying at least one supply potential to said integrated circuit;
• at least one ESD protection structure for protecting said integrated circuit from electrostatic discharge, said protection structure having a bipolar protection element disposed between said terminal pad and said integrated circuit and being connected to at least one of said busbars, said bipolar protection element having:
• an emitter zone of a first conduction type;
• a buried layer of said first conduction type;
• a base zone of a second conduction type disposed between said emitter zone and said buried layer;
• an intermediate layer spacing said base zone apart from said buried layer;
• said buried layer having at least one section in which are disposed highly doped and lightly doped regions, said highly doped regions being spaced apart from one another by said lightly doped regions;
• and
• a breakdown region having a reduced breakdown voltage and being disposed in a part of said protection element spaced apart from said section of said buried layer;
• and
• at least one of said base zone and said buried layer being electrically connected to said connecting line.