Back to results
US 7,022,614 B2Granted
Method of etching back of semiconductor wafer
AssigneeOki Electric Industry Co., Ltd.
InventorsAkira Uchiyama, Yutaka Kamata
Life of this patent
Estimating the term…
Abstract
A resist pattern is formed at an outermost peripheral end of the surface of a wafer. Thereafter, the back of the wafer is back-etched using chemicals to thin the wafer. A passivation film is left behind only at scribe lines for separating semiconductor chips located at the outermost peripheral end of the wafer surface and thereafter the wafer is back-etched.
Claims20
A method of etching a semiconductor wafer, comprising:
- preparing the semiconductor wafer having a first surface on which a plurality of semiconductor elements are formed, and a second surface that is opposite to the first surface, the semiconductor elements being separated by a plurality of scribe lines formed on the first surface of the semiconductor wafer;
- forming on the first surface of the semiconductor wafer an etching-resistant film having resistance to an etchant for etching the semiconductor wafer;
- patterning the etching-resistant film so as to leave the etching-resistant film at an outermost periphery of the first surface of semiconductor wafer;
- and
- etching the second surface of the semiconductor wafer with the etchant.
2 more elements
A method of etching a semiconductor wafer, comprising:
- preparing the semiconductor wafer having a first surface on which a plurality of scribe lines are formed, and a second surface that is opposite to the first surface;
- forming on the first surface of the semiconductor wafer an etching-resistant film having resistance to an etchant for etching the semiconductor wafer;
- leaving the etching-resistant film only at the scribe lines located on an outermost periphery of the first surface of the semiconductor wafer;
- and
- etching the second surface of the semiconductor wafer with the etchant.
2 more elements
A method of etching a semiconductor wafer comprising:
- preparing the semiconductor wafer having a first surface on which a plurality of scribe lines are formed, and a second surface that is opposite to the first surface;
- forming an etchant-resistant film on the first surface of the semiconductor wafer;
- leaving the etchant-resistant film on the scribe lines at a peripheral region of the semiconductor wafer so that the scribe lines at the peripheral region are filled with the etchant-resistant film;
- and
- etching the second surface of the semiconductor wafer with an etchant.
2 more elements
Dependencies are inferred from the claim text.