Wet cleaning method to eliminate copper corrosion
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Li Chou, Yih-Ann Lin, Yi-Chen Huang, Chao-Cheng Chen, Hun-Jan Tao
Life of this patent
Estimating the term…
Abstract
A method for cleaning semiconductor substrates includes a DI water clean operation that uses a spin speed no greater than 350 rpm. The cleaning method may include additional cleaning operations such as an organic clean, an aqueous chemical clean or a DI water/ozone clean. The cleaning method may be used to clean substrates after the conclusion of an etching procedure which exposes a single film between a Cu-containing conductive material and the environment. The spin speed of the DI water clean operation prevents copper corrosion due to breakdown of the film that separates the Cu-containing conductive material from the environment.
Claims21
A method for reducing copper corrosion in a semiconductor device comprising:
- providing a semiconductor substrate with a Cu-containing conductive material formed thereon and a film directly interposed between said Cu-containing conductive material and the environment;
- and
- cleaning said semiconductor substrate using a substantially ozone-free DI water clean operation that includes rotating said semiconductor substrate at a spin speed no greater than 350 rpm.
A method for reducing copper corrosion in a semiconductor device comprising:
- providing a semiconductor substrate with a Cu-containing conductive material formed thereon;
- performing an etch operation that exposes an etch stop film directly interposed between said Cu-containing conductive material and the environment;
- and
- cleaning said semiconductor substrate using a DI water clean operation that includes rotating said semiconductor substrate at a spin speed no greater than 350 rpm.
A method for reducing copper corrosion in a semiconductor device comprising:
- providing a semiconductor substrate with a Cu-containing conductive material formed thereon and a film directly interposed between said Cu-containing conductive material and the environment, wherein the film comprises one of SiN, SiC, SiOC and SiON;
- and
- cleaning said semiconductor substrate using a DI water clean operation that includes rotating said semiconductor substrate at a spin speed no greater than 350 rpm.
Dependencies are inferred from the claim text.